Palavra-chave: SERIES RESISTANCE

MULTIPLE-GATE TRANSISTORS NANOWIRE NANOWIRE-BASED TRANSISTORS JUNCTIONLESS NANOWIRE TRANSISTORS PIN DIODE MULTI-EXPONENTIAL DIODE MODEL EFFECTIVE CHANNEL LENGTH ANALYTICAL MODEL VARIABILITY ANALYTICAL CONTINOUS MODEL STACKED NANOWIRES TIPS-PENTACENE BOTTOM CONTACT TFT SOI MOSFET STACKED NANOSHEETS PHOTODIODE MOSFET MULTIPLE GATE TEMPERATURE SUBSTRATE EFFECT JUNCTIONLESS TRANSISTOR ELECTRICAL CHARACTERIZATION MOBILITY DEGRADATION TRIPLE GATE EXTRACTION METHOD SHORT-CHANNEL EFFECTS PARAMETER EXTRACTION ORGANIC TRANSISTOR NANOELECTRONICS FINFET NUMERICAL SIMULATION